Home    Company News    Domestic Electronic-Grade n-Hexane Breaks 99.99% Purity Barrier to Boost Semiconductor Industry Upgrade

Domestic Electronic-Grade n-Hexane Breaks 99.99% Purity Barrier to Boost Semiconductor Industry Upgrade

Hits: 122 img

    On January 5, 2026, a major breakthrough was achieved in China's semiconductor materials sector. Electronic-grade n-hexane has successfully overcome the technical challenge of 99.99% ultra-high purity, laying a solid foundation for the "lifeline" of cleaning in domestic semiconductor chip manufacturing. As a key auxiliary material for chip production, the purity of electronic-grade n-hexane directly determines wafer yield, with core indicators requiring total impurities ≤100ppm and metal ion content below 1ppb.
    The product achieves purity breakthrough through a full-chain technical system of "raw material pretreatment - two-stage continuous distillation - deep refining". Adopting new molecular sieve dehydration and nano-filtration processes, it boasts a solvent recovery rate of over 97% and a 35% reduction in VOCs emissions, balancing environmental protection and efficient production. Currently, products from Sinopec, Shandong Fengde Chemical and other enterprises have passed multiple international certifications, gradually reducing import dependence. With semiconductor processes advancing below 3nm and growing demand from new energy vehicles and 5G industries, the market scale of electronic-grade n-hexane will continue to expand, accelerating the domestic substitution process.

    For more information, please visit: https://www.tiktok.com/@mia_iota/video/7597717976720149782

Online QQ Service, Click here

QQ Service

What's App